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Prof. Albert J.P. Theuwissen
Albert J.P.Theuwissen ±³¼ö(1954)´Â 1977³â¿¡ º§±â¿¡ Leuven Ä«Å縯 ´ëÇÐ(Catholic University of Leuven)¿¡¼ ÀüÀÚ°øÇÐ ¹Ú»ç ÇÐÀ§¸¦ ÃëµæÇß½À´Ï´Ù. ±×ÀÇ ³í¹®Àº ¼±Çü CCD À̹ÌÁö ¼¾¼ ÁÖº¯ÀÇ ÁöÁö Çϵå¿þ¾îÀÇ °³¹ß¿¡ °üÇÑ °ÍÀÔ´Ï´Ù. 2001³â ÇöÀç ±×´Â ³×´ú¶õµå Delft ¿¡ À§Ä¡ÇÑ µ¨ÇÁÆ® °ø°ú´ëÇÐ(Delft University of Technology)¿¡¼ ½Ã°£Á¦ ±³¼ö·Î ÀçÀÓÇϰí ÀÖ½À´Ï´Ù. ÀÌ ´ëÇп¡¼ ±×´Â °íü »óÅ À̹Ì¡¿¡ ´ëÇÑ °ÀǸ¦ Çϸç, ¹Ú»ç °úÁ¤ÀÇ Çлýµé¿¡°Ô CMOS À̹ÌÁö ¼¾¼ ¿¬±¸¸¦ ÁöµµÇϰí ÀÖ½À´Ï´Ù.
2005³â¿¡ Theuwissen ±³¼ö´Â °íü »óÅ À̹ÌÁö ¼¾¼ ºÐ¾ßÀÇ À¯·´ ¿¬±¸, °³¹ß Ȱµ¿À» Ȱ¼ºÈ½Ã۱â À§ÇØ ºñ¿µ¸® ´ÜüÀÎ ETETIS(European Technical Expert Team on Image Sensors)¸¦ ¼³¸³ÇÏ¿´½À´Ï´Ù. ±×´Â "Photonics Spectra"ÀÇ ÆíÁý À§¿øÀ̸ç, IEEEÀÇ Æ¯º° ȸ¿ø, SPIEÀÇ ÀÏ¿øÀ¸·Î Ȱµ¿Çϰí ÀÖ½À´Ï´Ù.
1977³âºÎÅÍ 1983³â±îÁö Theuwissen ±³¼ö´Â Leuven Ä«Å縯 ´ëÇÐÀÇ ESAT-¿¬±¸¼Ò¿¡¼ ¼±Çü CCD À̹ÌÁö ¼¾¼¿ë ¹ÝµµÃ¼ ±â¼ú °³¹ß¿¡ Àü³äÇÏ¿´½À´Ï´Ù. 1983³â¿¡´Â Àü±â °øÇÐ ¹Ú»çÇÐÀ§¸¦ ÃëµæÇÏ¿´½À´Ï´Ù. ±×ÀÇ ¹Ú»ç ÇÐÀ§ ³í¹®Àº CCD ±â¼ú¿¡¼ °ÔÀÌÆ® ¹°Áú·Î¼ÀÇ Åõ¸íÇÑ ÀüµµÃþÀÇ ±¸Çö¿¡ °üÇÑ °ÍÀ̾ú½À´Ï´Ù.
1983³â¿¡ ³×´ú¶õµå ¾ÆÀÎÆ®È£º¥¿¡ ÀÖ´Â Çʸ³ ¸®¼Ä¡ ¿¬±¸¼ÒÀÇ ÃʼÒÇü ȸ·Î ºÎ¹®¿¡¼ °úÇÐºÐ¾ß ½ºÅÇÀÇ ÀÏ¿øÀ¸·Î¼ Âü¿©ÇÏ¿´½À´Ï´Ù. °íü »óÅ À̹ÌÁö ¼¾¼ ºÐ¾ß ¿¬±¸¿¡ °ü¿©ÇÑ ÀÌÈĺÎÅÍ, ±×´Â SDTV ¹× HDTV À̹ÌÁö ÀåÄ¡µé¿¡ ´ëÇÑ ÇÁ·ÎÁ§Æ®¸¦ À̲ø¾ú½À´Ï´Ù.? 1991³â¿¡ ±×´Â CCD¿Í CMOS °íü »óÅ À̹Ì¡ Ȱµ¿À» Æ÷ÇÔÇÏ´Â À̹ÌÁö µð¹ÙÀ̽º ºÎ¼ÀåÀÌ µÇ¾ú½À´Ï´Ù.
2002³â 4¿ù¿¡´Â DALSA »ç¿¡ ÃÖ°í ±â¼ú ÀÓ¿øÀ¸·Î ÇÕ·ùÇß½À´Ï´Ù. 2004³â 9¿ù¿¡ ÃÖ°í ±â¼ú ÀÓ¿ø Á÷¿¡¼ ¹°·¯³ª DALSA ¹ÝµµÃ¼ »çÀÇ ÃÖ°í °úÇÐÀÚ·Î µÇ¾î °íü »óÅ À̹ÌÁö ¼¾¼ ±â¼úÀ» °¡¸£Ä¡°í ÈÆ·ÃÇÏ´Â µ¥¿¡ Àü³äÇϰí ÀÖ½À´Ï´Ù.
Theuwissen ±³¼ö´Â °íü »óÅ À̹ÌÁö ºÐ¾ß¿¡¼ ¸¹Àº ±â¼ú ³í¹®ÀÇ ÀúÀÚ ¶Ç´Â °øÀúÀÚ·Î Âü¿©ÇÏ¿´°í, ¿©·¯ ƯÇã±ÇÀ» ȹµæÇÏ¿´½À´Ï´Ù. 1988³â, 1989³â, 1995³â, 1996³â¿¡´Â ±¹Á¦ ÀüÀÚ ÀåÄ¡ ȸÀÇ(International Electron Device Meeting)ÀÇ ³í¹® ¼±¹ß À§¿øÈ¸¿øÀ̾ú½À´Ï´Ù. 1991³â 5¿ùÈ£, 1997³â 10¿ùÈ£, 2003³â 1¿ùÈ£¿¡ °íü »óÅ À̹ÌÁö ¼¾¼¿¡ °üÇÑ IEEE Transactions on Electron Devices ƯÁý ±â»çÀÇ °øµ¿ ÆíÁýÀÚ¿´À¸¸ç, 1998³â 11/12¿ùÈ£ µðÁöÅÐ À̹ÌÁö¿¡ °üÇÑ IEEE ¸¶ÀÌÅ©·Î ƯÁý ±â»çÀÇ ?°øµ¿ ÆíÁýÀÚ¿´½À´Ï´Ù.
1997³â°ú 2003³â¿¡ ±×´Â Charge-Coupled Device¿Í Advanced Image Sensor¿¡ °üÇÑ IEEE ±¹Á¦ ¿öÅ©¼¥ÀÇ ÀÇÀåÀ¸·Î¼ ÀÓ¹«¸¦ ¼öÇàÇß½À´Ï´Ù. ¾Õ¼ ¾ð±ÞÇÑ ¿öÅ©¼¥ÀÇ ¿î¿µ À§¿øÈ¸ÀÇ ÀÏ¿øÀÌ°í µ¿½Ã¿¡ °íü »óÅ À̹ÌÁö ¼¾¼ ºÐ¾ß¿¡¼ °¡Àå ¿ì¼öÇÑ ³í¹®À» ½Ã»óÇÏ´Â Walter Kosonocky AwardÀÇ ¼³¸³ÀÚÀ̱⵵ ÇÕ´Ï´Ù.
¸î ÇØ µ¿¾È Theuwissen ±³¼ö´Â European Solid-State Device Research Conference ¿Í European Solid-State Circuits Conference ÀÇ ±â¼ú À§¿øÀ» ¿ªÀÓÇÏ¿´½À°í, ÇöÀç´Â International Solid-State Circuits Conference ÀÇ ±â¼ú À§¿øÀ¸·Î Ȱµ¿Çϰí ÀÖ½À´Ï´Ù. ¶ÇÇÑ ÀÌ À§¿øÈ¸¿¡ ´ëÇØ, ±×´Â À¯·´ ISSCC À§¿øÈ¸ »ç¹«ÃÑÀå, ºÎÀÇÀå, ÀÇÀåÀ» ¿ªÀÓÇÏ¿´°í ÇöÀç Àüü ISSCC ÁýÇà À§¿øÈ¸ ȸ¿øÀÔ´Ï´Ù.
1995³â ±×´Â "Solid-State Imaging with Charge-Coupled Devices"¶ó´Â Ã¥À» Àú¼úÇÏ¿´½À´Ï´Ù. 2005³â¿¡´Â °íü »óÅ À̹ÌÁö ¼¾¼ ºÐ¾ßÀÇ À¯·´³» R&D Ȱµ¿À» Ȱ¼ºÈ½Ã۱â À§ÇØ ºñ¿µ¸® ´ÜüÀÎ ETETIS (European Technical Expert Team on Image Sensors)¸¦ ¼³¸³ÇÏ¿´½À´Ï´Ù.

